Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

Y. Miyamoto; R. Nakagawa; I. Kashima; M. Ishida; K. Furuya

doi:https://doi.org/10.7567/SSDM.2005.I-2-6

[I-2-6] Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

Y. Miyamoto, R. Nakagawa, I. Kashima, M. Ishida, K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.CREST, Japan Science and Technology Agency, 3.Quantum Nanoelectronics Research Center, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2005.I-2-6

2005 International Conference on Solid State Devices and Materials

[I-2-6] Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate