Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

Y. Miyamoto; R. Nakagawa; I. Kashima; M. Ishida; K. Furuya

doi:https://doi.org/10.7567/SSDM.2005.I-2-6

[I-2-6] Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

Y. Miyamoto、R. Nakagawa、I. Kashima、M. Ishida、K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology、2.CREST, Japan Science and Technology Agency、3.Quantum Nanoelectronics Research Center, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2005.I-2-6

2005 International Conference on Solid State Devices and Materials

[I-2-6] Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate