The Japan Society of Applied Physics

[I-5-5] Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P2S5/(NH4)2Sx Surface Treatments

Liann-Bie Chang、Ming-Jer Jeng、Chia-Hwa Chang、Li-Zen Hsieh、Ping-Yu Kuei (1.Department of Electronic Engineering, Chang-Gung University、2.Department of Electronic Engineering, St. John’s & St. Mary’s Institute of Technology、3.Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University)

https://doi.org/10.7567/SSDM.2005.I-5-5