The Japan Society of Applied Physics

[P1-10] Analysis of NiSi Fully-silicided Gate on SiO2 and HfO2 for CMOS Application

Chih Feng Huang, Bing Yue Tsui (1.Department of electronics Engineering, National Chiao-Tung University, 2.National Nano Device Laboratories)

https://doi.org/10.7567/SSDM.2005.P1-10