The Japan Society of Applied Physics

[P1-17] Influences of Ion Implantation Damages on Elevated Source/Drain Formation for Ultra-Thin Body SOI MOSFET

H.J. Oh、T. Sakaguchi、J.C. Bea、T. Fukusima、M. Koyanagi (1.Dept. of Bioengineering and Robotics, Tohoku University、2.Japan Science and Technology Corporation (JST))

https://doi.org/10.7567/SSDM.2005.P1-17