The Japan Society of Applied Physics

[P1-17] Influences of Ion Implantation Damages on Elevated Source/Drain Formation for Ultra-Thin Body SOI MOSFET

H.J. Oh, T. Sakaguchi, J.C. Bea, T. Fukusima, M. Koyanagi (1.Dept. of Bioengineering and Robotics, Tohoku University, 2.Japan Science and Technology Corporation (JST))

https://doi.org/10.7567/SSDM.2005.P1-17