Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si

Tetsuya Goto; Masato Terasaki; Hirokazu Asahara; Hiroshi Nakazawa; Atsutoshi Inokuchi; Jiro Yamanaka; Akinobu Teramoto; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2005.P1-25

[P1-25] Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si

Tetsuya Goto、Masato Terasaki、Hirokazu Asahara、Hiroshi Nakazawa、Atsutoshi Inokuchi、Jiro Yamanaka、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University、2.Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2005.P1-25

2005 International Conference on Solid State Devices and Materials

[P1-25] Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si