Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si

Tetsuya Goto; Masato Terasaki; Hirokazu Asahara; Hiroshi Nakazawa; Atsutoshi Inokuchi; Jiro Yamanaka; Akinobu Teramoto; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2005.P1-25

[P1-25] Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si

Tetsuya Goto, Masato Terasaki, Hirokazu Asahara, Hiroshi Nakazawa, Atsutoshi Inokuchi, Jiro Yamanaka, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2005.P1-25

2005 International Conference on Solid State Devices and Materials

[P1-25] Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si