[P1-8] lmproving high-k gate dielectrics properties by high pressure water vapor annealing

P. Punchaipetch、H. Nakamura、Y. Uraoka、T. Fuyuki、T. Sameshima、S. Horii (1.Nara Institute of Science and Technology、2.Tokyo University of Agriculture and Technology、3.Hitachi Kokusai Electric Inc.)

https://doi.org/10.7567/SSDM.2005.P1-8