[P1-9] Reduction of Accumulation Thickness in Metal Gate

Hiroshi Watanabe、Kazuaki Nakajima、Kouji Matsuo、Tomohiro Saito、Takuya Kobayashi (1.Advanced LSI Technology Laboratory, Toshiba Corp.、2.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)

https://doi.org/10.7567/SSDM.2005.P1-9