Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application

Hoon Choi; Mungi Park; Takafumi Fukushima; Mitsumasa Koyanagi

doi:https://doi.org/10.7567/SSDM.2005.P2-13

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[P2-13] Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application

Hoon Choi、Mungi Park、Takafumi Fukushima、Mitsumasa Koyanagi (1.Department of Bioengineering and Robotics, Tohoku University、2.Mobile Display R&D Team, LCD Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.P2-13

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