[P3-10] Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling
B. Cheng、S. Roy、A. Martinez、S. Markov、A. Asenov
(1.Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow)
https://doi.org/10.7567/SSDM.2005.P3-10