Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Y. X. Liu; E. Sugimata; K. Ishii; M. Masahara; K. Endo; T. Matsukawa; H. Takashima; H. Yamauchi; E. Suzuki

doi:https://doi.org/10.7567/SSDM.2005.P3-11

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P3-11] Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Y. X. Liu, E. Sugimata, K. Ishii, M. Masahara, K. Endo, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.P3-11

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