Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

C. T. Lin; Y. K. Fang; W. K. Yeh; H. C. Chang; C. H. Hsu; L. W. Chen; M. L. Lee; C. T. Tsai; W.T. Shiau

doi:https://doi.org/10.7567/SSDM.2005.P3-14

[P3-14] Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

C. T. Lin、Y. K. Fang、W. K. Yeh、H. C. Chang、C. H. Hsu、L. W. Chen、M. L. Lee、C. T. Tsai、W.T. Shiau (1.United Microelectronics Corporation (UMC), Central R&D Division、2.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、3.Department of Electrical Engineering, National University of Kaohsiung)

https://doi.org/10.7567/SSDM.2005.P3-14

2005 International Conference on Solid State Devices and Materials

[P3-14] Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches