MEMS 3-D Stacked RF Transformers Fabricated by 0.18 μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances

Yo-Sheng Lin; Hsiao-Bin Liang; Tao Wang; Shey-Shi Lu

doi:https://doi.org/10.7567/SSDM.2005.P3-15

[P3-15] MEMS 3-D Stacked RF Transformers Fabricated by 0.18 μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances

Yo-Sheng Lin、Hsiao-Bin Liang、Tao Wang、Shey-Shi Lu (1.Department of Electrical Engineering, National Chi-Nan University、2.Department of Electrical Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2005.P3-15

2005 International Conference on Solid State Devices and Materials

[P3-15] MEMS 3-D Stacked RF Transformers Fabricated by 0.18 μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances