Investigation of Accumulation-mode Vertical Double-gate MOSFET

M. Masahara; K. Endo; Y.-X. Liu; T. Matsukawa; S. O’uchi; K. Ishii; H. Takashima; E. Sugimata; E. Suzuki

doi:https://doi.org/10.7567/SSDM.2005.P3-5

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P3-5] Investigation of Accumulation-mode Vertical Double-gate MOSFET

M. Masahara, K. Endo, Y.-X. Liu, T. Matsukawa, S. O’uchi, K. Ishii, H. Takashima, E. Sugimata, E. Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.P3-5

▲