[P3-6] Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method

Mungi Park、Hoon Choi、Jicheol Bea、Takafumi Fukushima、Mitsumasa Koyanagi (1.Department of Bioengineering and Robotics, Tohoku University、2.Mobile Display R&D Team, LCD Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.P3-6