[P6-11] Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate Metallization

J.H. Jang、S. Kim、I. Adesida (1.Department of Information and Communications Gwangju Institute of Science and Technology、2.Micro and Nanotechnology Laboratory University of Illinois at Urbana Champaign)

https://doi.org/10.7567/SSDM.2005.P6-11