The Japan Society of Applied Physics

[A-7-3] High-PVCR Si/Si1-xGex Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer

Hirotake Maekawa、Yoshihiro Sano、Yoshiyuki Suda (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

https://doi.org/10.7567/SSDM.2006.A-7-3