[B-2-5] Light emission from two junction Si CMOS LED’s (450nm ? 750nm) with two order increase in emission intensity - Applications for next generation silicon-based optoelectronics

L. W. Snyman、M. du Plessis、H. Aharoni (1.Tshwane University of Technology, Department of Electronic Engineering、2.University of Pretoria, Carl and Emily Fuchs Institute of Microelectronics、3.Ben Gurion University of the Negev, Department of Electronic and Computer Engineering, Fundamental and Environmental Research Laboratories)

https://doi.org/10.7567/SSDM.2006.B-2-5