[C-5-3] SiOx/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC

Masatsugu Shouji、Toshiaki Nagashima、Yoshiyuki Suda (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

https://doi.org/10.7567/SSDM.2006.C-5-3