[C-6-4L] Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND　Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

Ki-Tae Park、SeungChul Lee、Jongsun Sel、Jungdal Choi、Kinam Kim (1.Semiconductor R&D Center, CAE Team, Memory Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2006.C-6-4L