[E-1-6] The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs

Seong-Jin Yeon、Jongwon Lee、Gyungseon Seol、Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

https://doi.org/10.7567/SSDM.2006.E-1-6