[E-10-4] High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada, Hajime Okumura, Hiromichi Ohashi, Yoshiki Yano, Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2006.E-10-4