High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator

Shuichi Yagi; Mitsuaki Shimizu; Masaki Inada; Hajime Okumura; Hiromichi Ohashi; Yoshiki Yano; Nakao Akutsu

doi:https://doi.org/10.7567/SSDM.2006.E-10-4

[E-10-4] High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator

Shuichi Yagi、Mitsuaki Shimizu、Masaki Inada、Hajime Okumura、Hiromichi Ohashi、Yoshiki Yano、Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology、2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2006.E-10-4

2006 International Conference on Solid State Devices and Materials

[E-10-4] High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator