C-band GaN-FET Power Amplifiers with 160-W Output Power

Y. Okamoto; A. Wakejima; K. Matsunaga; Y. Ando; T. Nakayama; K. Ota; H. Miyamoto

doi:https://doi.org/10.7567/SSDM.2006.E-2-2

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[E-2-2] C-band GaN-FET Power Amplifiers with 160-W Output Power

Y. Okamoto、A. Wakejima、K. Matsunaga、Y. Ando、T. Nakayama、K. Ota、H. Miyamoto (1.Advanced HF Device R&D Center, R&D Association for Future Electron Devices c/o System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2006.E-2-2

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