[E-2-2] C-band GaN-FET Power Amplifiers with 160-W Output Power

Y. Okamoto, A. Wakejima, K. Matsunaga, Y. Ando, T. Nakayama, K. Ota, H. Miyamoto (1.Advanced HF Device R&D Center, R&D Association for Future Electron Devices c/o System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2006.E-2-2