[E-5-2] Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress

T. W. H. Phua, D. S. Ang, C. H. Tung, C. H. Ling (1.National University of Singapore, Department of Electrical and Computer Engineering, 2.Nanyang Technological University, School of Electrical and Electronic Engineering, 3.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2006.E-5-2