[E-5-4] Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration

Masakatsu Tsuchiaki、Akira Nishiyama (1.Corporate Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.E-5-4