Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates

Hiroshi Itokawa; Haruko Akutsu; Akiko Nomachi; Hiroshi Oono; Toshihiko Iinuma; Kyoichi Suguro

doi:https://doi.org/10.7567/SSDM.2006.E-6-1

[E-6-1] Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates

Hiroshi Itokawa, Haruko Akutsu, Akiko Nomachi, Hiroshi Oono, Toshihiko Iinuma, Kyoichi Suguro (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 2.Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.E-6-1

2006 International Conference on Solid State Devices and Materials

[E-6-1] Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates