Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates

Hiroshi Itokawa; Haruko Akutsu; Akiko Nomachi; Hiroshi Oono; Toshihiko Iinuma; Kyoichi Suguro

doi:https://doi.org/10.7567/SSDM.2006.E-6-1

[E-6-1] Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates

Hiroshi Itokawa、Haruko Akutsu、Akiko Nomachi、Hiroshi Oono、Toshihiko Iinuma、Kyoichi Suguro (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.E-6-1

2006 International Conference on Solid State Devices and Materials

[E-6-1] Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates