High-temperature and UV-assisted C-V characterization of GaN MIS structures

Hiroki Kato; Marcin Miczek; Tamotsu Hashizume

doi:https://doi.org/10.7567/SSDM.2006.E-9-2

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[E-9-2] High-temperature and UV-assisted C-V characterization of GaN MIS structures

Hiroki Kato、Marcin Miczek、Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

https://doi.org/10.7567/SSDM.2006.E-9-2

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