ICP Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN HFET

K. Matsuura; D. Kikuta; J.-P. Ao; H. Ogiya; M. Hiramoto; H. Kawai; Y. Ohno

doi:https://doi.org/10.7567/SSDM.2006.E-9-5

2006 International Conference on Solid State Devices and Materials

Sep 12, 2006 - Sep 15, 2006
PACIFICO Yokohama, Yokohama, Japan

[E-9-5] ICP Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN HFET

K. Matsuura, D. Kikuta, J.-P. Ao, H. Ogiya, M. Hiramoto, H. Kawai, Y. Ohno (1.Institute of Technology and Science, The University of Tokushima, 2.SAMCO Inc., 3.POWDEC K. K.)

https://doi.org/10.7567/SSDM.2006.E-9-5

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