[F-1-4] Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM

J. Y. Jung、H. J. Joo、J. H. Park、S. K. Kang、H. S. Kim、D. Y. Choi、J. H. Kim、Y. S. Lee、Y. M. Kang、S. Y. Lee、H. S. Jeong、Kinam Kim (1.Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2006.F-1-4