[F-2-4] Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM

Min Gyu Sung、Kwan-Yong Lim、Heung-Jae Cho、Seung Ryong Lee、Se-Aug Jang、Yong Soo Kim、Moon-Sig Joo、Ju-Hee Lee、Tae-Yoon Kim、Hong-Seon Yang、Seung-Ho Pyi、Jin Woong Kim (1.Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2006.F-2-4