[F-2-4] Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM

Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Yong Soo Kim, Moon-Sig Joo, Ju-Hee Lee, Tae-Yoon Kim, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim (1.Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2006.F-2-4