Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

A. Tsuda; T. Kunikiyo; T. Okagaki; T. Watanabe; M. Tanizawa; K. Ishikawa; H. Nunogami; A. Uchida

doi:https://doi.org/10.7567/SSDM.2006.F-3-3

2006 International Conference on Solid State Devices and Materials

Sep 12, 2006 - Sep 15, 2006
PACIFICO Yokohama, Yokohama, Japan

[F-3-3] Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

A. Tsuda, T. Kunikiyo, T. Okagaki, T. Watanabe, M. Tanizawa, K. Ishikawa, H. Nunogami, A. Uchida (1.Device IP Development Dept., 2.Advanced Device Development Dept. Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.F-3-3

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