Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

A. Tsuda; T. Kunikiyo; T. Okagaki; T. Watanabe; M. Tanizawa; K. Ishikawa; H. Nunogami; A. Uchida

doi:https://doi.org/10.7567/SSDM.2006.F-3-3

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[F-3-3] Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

A. Tsuda、T. Kunikiyo、T. Okagaki、T. Watanabe、M. Tanizawa、K. Ishikawa、H. Nunogami、A. Uchida (1.Device IP Development Dept.、2.Advanced Device Development Dept. Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.F-3-3

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