[F-6-1] NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

C T Huang, L S Jeng, W H Hung, S F Ting, K H Lee, M L Tseng, Osbert Cheng, C W Liang (1.United Microelectronics Corp. (UMC), CRD Logic Division)

https://doi.org/10.7567/SSDM.2006.F-6-1