[F-6-1] NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

C T Huang、L S Jeng、W H Hung、S F Ting、K H Lee、M L Tseng、Osbert Cheng、C W Liang (1.United Microelectronics Corp. (UMC), CRD Logic Division)

https://doi.org/10.7567/SSDM.2006.F-6-1