NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping

C. J. Tang; H.C. Ma; C. T. Chan; Tahui Wang; H. C.-H. Wang

doi:https://doi.org/10.7567/SSDM.2006.F-6-2

[F-6-2] NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping

C. J. Tang、H.C. Ma、C. T. Chan、Tahui Wang、H. C.-H. Wang (1.Dept. of Electronics Engineering, National Chiao-Tung University、2.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2006.F-6-2

2006 International Conference on Solid State Devices and Materials

[F-6-2] NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping