[F-6-2] NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping

C. J. Tang, H.C. Ma, C. T. Chan, Tahui Wang, H. C.-H. Wang (1.Dept. of Electronics Engineering, National Chiao-Tung University, 2.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2006.F-6-2