Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices

Yiming Li; Shao-Ming Yu

doi:https://doi.org/10.7567/SSDM.2006.F-6-4L

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[F-6-4L] Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices

Yiming Li、Shao-Ming Yu (1.Department of Communication Engineering, National Chiao Tung University、2.Department of Computer Science, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.F-6-4L

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