Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices

Yiming Li; Shao-Ming Yu

doi:https://doi.org/10.7567/SSDM.2006.F-6-4L

[F-6-4L] Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices

Yiming Li, Shao-Ming Yu (1.Department of Communication Engineering, National Chiao Tung University, 2.Department of Computer Science, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.F-6-4L

2006 International Conference on Solid State Devices and Materials

[F-6-4L] Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices