[F-7-2] High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications

S. Maikap, P. J. Tzeng, T.-Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, J.-R. Yang, M.-J. Tsai (1.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 2.Department of Material Science Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2006.F-7-2