High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications

S. Maikap; P. J. Tzeng; T.-Y. Wang; C. H. Lin; H. Y. Lee; C. C. Wang; L. S. Lee; J.-R. Yang; M.-J. Tsai

doi:https://doi.org/10.7567/SSDM.2006.F-7-2

[F-7-2] High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications

S. Maikap、P. J. Tzeng、T.-Y. Wang、C. H. Lin、H. Y. Lee、C. C. Wang、L. S. Lee、J.-R. Yang、M.-J. Tsai (1.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute、2.Department of Material Science Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2006.F-7-2

2006 International Conference on Solid State Devices and Materials

[F-7-2] High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications