[F-8-1] Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Wiring Technology

T. Kajiyama、S. Miura、Y. Asao、T. Ueda、H. Aikawa、M. Iwayama、K. Hosotani、M. Amano、M. Yoshikawa、K. Tsuchida、S. Ikegawa、T. Kishi、N. Shimomura、N. Ohshima、H. Hada、A. Nitayama、S. Tahara、H. Yoda (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation、2.Corporate Research & Development Center, Toshiba Corporation、3.System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2006.F-8-1