Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO2/TaN gate on Strained Si-SiGe channel

Wei-Yip Loh; YiXuan Chen; S. J. Lee; L. K. Bera; Rong Yang; Guo-Qiang Lo; Dim-Lee Kwong

doi:https://doi.org/10.7567/SSDM.2006.F-9-1

[F-9-1] Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO2/TaN gate on Strained Si-SiGe channel

Wei-Yip Loh、YiXuan Chen、S. J. Lee、L. K. Bera、Rong Yang、Guo-Qiang Lo、Dim-Lee Kwong (1.Institute of Microelectronics、2.Silicon Nano Device Lab., National University of Singapore)

https://doi.org/10.7567/SSDM.2006.F-9-1

2006 International Conference on Solid State Devices and Materials

[F-9-1] Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO2/TaN gate on Strained Si-SiGe channel