Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures

[F-9-2] Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures

Mizuki Ono、Masato Koyama、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)