[F-9-3] Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs; Short Channel Effects, Carrier Velocity and Parasitic Resistance

Yoshifumi Nishi、Atsuhiro Kinoshita、Junji Koga (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.F-9-3